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Note: 3E003.b. does not control "technology" for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.
Cuando este retraso sea superior a diez días, se cobrarán intereses correspondientes a la totalidad del tiempo atrasadoEurLex-2 EurLex-2
HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications.
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The density and mobility of the electrons in the sheet are critical for the operation of the HEMT.
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Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;
Al inicio de la terapia antirretroviral combinada, en los pacientes infectados por VIH con deficiencia inmune grave, puede aparecer una respuesta inflamatoria frente a infecciones oportunistas latentes o asintomáticas (ver secciónEurLex-2 EurLex-2
Note: 3E003.b. does not control technology for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.
Si de las exportaciones totales a terceros países por parte de productores exportadores coreanos durante el PIR (# t según los datos de la oficina estadística coreana) se deducen las efectuadas por los productores exportadores que cooperaron (# t), las exportaciones totales de los productores exportadores que no cooperaron ascienden a # toneladasEurLex-2 EurLex-2
Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;
Eso es brillanteEurLex-2 EurLex-2
Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;
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High Electron Mobility Transistors (HEMTs)
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Note: 3E003.b. does not control technology for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.
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Note: 3E003.b. does not control ‘technology’ for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.
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b. hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;
ADN (dinitroamida de amonio o SR #) (CASEurLex-2 EurLex-2
HEMT high electron mobility transistors
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b. Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices
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Note: 3E003.b. does not control technology for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.
Es más, en #, la Comisión llegó a la conclusión de que los productores exportadores estaban absorbiendo las medidas y decidió, por tanto, incrementar los derechos antidumping a niveles muy importantes para los productores exportadores afectados (hasta un #,# %EurLex-2 EurLex-2
A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction.
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Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz.
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-other identification markings relating to devices complying with the abovementioned description0ex 8541 21 9010High electron mobility transistor (HEMT), for frequencies of 2 GHz or more but not exceeding 20 GHz, with a dissipation rate not exceeding 180 mW, contained in a housing with a diameter not exceeding 3 mm, with not more than 4 connections0ex 8541 21 9020Field-effect transistor (FET) for frequencies of 2 GHz or more but not exceeding 16 GHz, with a dissipation rate not exceeding 225 mW, contained in a housing with a diameter not exceeding 3 mm, with not more than 4 connections0ex 8541 29 9010Transistor with a power of 150 W or more at a voltage of 160 V or more and with a cut-off frequency of 20 MHz or more, contained in a housing the exterior dimensions of which do not exceed 22×37 mm, with not more than 3 connections and bearing:
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Note: 3E003.b. does not control ‘technology’ for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.
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Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;
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125 sinne gevind in 8 ms. Hulle kom uit baie bronne en word nie nagegaan nie.