floating-gate avalanche-injection MOS transistor
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Transistor de Avalancha
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Therefore, the very first applications of avalanche transistors were in switching circuits and multivibrators.
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Holme, Andrew (2006), Avalanche transistor pulse generator, retrieved 23 April 2008.
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The differential dynamical mode described here, also called the small signal model, is the only intrinsic small signal model of the avalanche transistor.
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Avalanche transistor circuits are intrinsically large signal circuits, so small signal models, when applied to such circuits, can only give a qualitative description.
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A clear description of avalanche transistor circuits working in second breakdown regime together with some examples can be found in the paper Baker (1991).
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Particularly, stray inductances in series with collector and emitter leads have to be minimized to preserve the high speed performance of avalanche transistor circuits.
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Avalanche transistors are mainly used as fast pulse generators, having rise and fall times of less than a nanosecond and high output voltage and current.
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The two circuits considered in this section are the simplest examples of avalanche transistor circuits for switching purposes: both the examples detailed are monostable multivibrators.
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The first application of the avalanche transistor as a linear amplifier, named Controlled Avalanche Transit Time Triode, (CATT) was described in (Eshbach, Se Puan & Tantraporn 1976).
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Transmission line avalanche pulser: a trigger signal applied to the base lead of the avalanche transistor cause the avalanche breakdown between the collector and emitter lead.
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However, since avalanche transistor switching circuits are intrinsically large signal circuits, the only way to predict with reasonable accuracy their real behaviour is to do numerical simulations.
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Nowadays, there is still active research on avalanche devices (transistors or other) made of compound semiconductors, capable of switching currents of several tens of amperes even faster than "traditional" avalanche transistors.
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Operation in the avalanche breakdown region is called avalanche-mode operation: it gives avalanche transistors the ability to switch very high currents with less than a nanosecond rise and fall times (transition times).
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Stray elements due to the package enclosing the transistor are deliberately neglected, since their analysis would not add anything useful from the point of view of the working principles of the avalanche transistor.
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However, this trigger circuit requires a diode capable of resist to high reverse voltages and switch very fast, characteristics that are very difficult to realize in the same diode, therefore it is rarely seen in modern avalanche transistor circuits.
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However, the required inverse voltage for the feed diode is far lower respect diodes to be used in collectior trigger input circuits, and since ultra fast Schottky diodes are easily and cheaply found, this is the driver circuit employed in most modern avalanche transistor circuit.
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A graphical method for studying the behavior of an avalanche transistor was proposed in references Spirito (1968) and Spirito (1971): the method was first derived in order to plot the static behavior of the device and then was applied also to solve problems concerning the dynamic behavior.
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The current amplification mechanism is the same of the avalanche transistor, i.e. carrier generation by impact ionization, but there is also a transit-time effect as in IMPATT and TRAPATT diodes, where a high-field region travels along the avalanching junction, precisely in along the intrinsic region.
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It is also possible to realize avalanche mode bistable multivibrators, but their use is not as common as other types described of multivibrators, one important reason being that they require two avalanche transistors, one working continuously in avalanche breakdown regime, and this can give serious problems from the point of wiev of power dissipation and device operating life.
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In essence, the transistor is being used as a diode biased in the Zener avalanche region.
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Single-event snapback is similar to SEL but not requiring the PNPN structure, can be induced in N-channel MOS transistors switching large currents, when an ion hits near the drain junction and causes avalanche multiplication of the charge carriers.
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UPDATED VERSION MAGRAV "FAM" SOLID STATE OUT WITH REVERSE DIODE AVALANCHE TO AVOID POSSIBLE SHORT AND TRANSISTOR PNP.
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While this phenomenon is destructive for Bipolar junction transistors working in the usual way, it can be used to push-up further the current and voltage limits of a device working in avalanche mode by limiting its time duration: also, the switching speed of the device is not negatively affected.
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23 sinne gevind in 7 ms. Hulle kom uit baie bronne en word nie nagegaan nie.