P region-intrinsic region-N region oor Frans
P region-intrinsic region-N region
Vertalings in die woordeboek Engels - Frans
région de type P-région intrinsèque-région de type N
Geskatte vertalings
Vertoon algoritmies gegenereerde vertalings
voorbeelde
Advanced filtering
Voorbeelde moet herlaai word.
An integrated photodetector-amplifier structure which features a p-region (21), intrinsic region (12), n-region photodetector (11) (PIN photodetector) and a self-aligned junction field-effect transistor (JFET) incorporated in the same integrated circuit.
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The photodiode (2) is formed of a layer sequence of a first n-doped region (6), a p-doped region (7), an intrinsic region (8) and a second n-doped region (9) of a semiconductor material.
IMMEUBLES, MATÉRIEL ET DÉPENSES DIVERSES DE FONCTIONNEMENTpatents-wipo patents-wipo
A p-doped region an intrinsic semiconductor region and the a n-doped region in the wall form a p-i-n photodetector capable of converting an optical signal from an optical fiber placed in the groove to an electric signal.
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According to the photosensitive unit, optical-to-electrical conversion is performed by using a P-type doping region, intrinsic region, and N-type doping region structure, so that a light current generated does not change dramatically easily due to the fluctuation of a working voltage, and the degree of accuracy is high.
Mesures d’identificationpatents-wipo patents-wipo
In an embodiment, there is provided a photovoltaic film 100 that includes a p-doped region 102, an n-doped region 106, and an intrinsic region 104 positioned between the p-doped region 102 and the n-doped region 106, wherein an overall thickness of the photovoltaic film is between about 15 nm to about 30 nm so as to extract hot carriers excited across a band gap, wherein the extracted hot carriers are capable of resulting in an open circuit voltage, Voc, of the photovoltaic film that increases with optical frequency, and wherein the extracted hot carriers are capable of resulting in a total short-circuit current density, Jsc, between about 4 mA/cm2 and about 8 mA/cm2.
L'article #bis, § #, du même Code, inséré par la loi du # novembre #, est remplacé par la disposition suivantepatents-wipo patents-wipo
The invention relates to a memory point consisting of a semiconducting bar whose ends are strongly doped so as to constitute source and drain regions (101, 102) and whose central part comprises, between the source and drain regions, an N-type region (104) surrounded over the larger part of its periphery by a quasi-intrinsic P-type region (105), the P-type region itself being surrounded by an insulated gate (107).
Le SDPF a testé l’utilisation de transpondeurs pour les plaisanciers et un rapport est attendu en 2006.patents-wipo patents-wipo
6 sinne gevind in 23 ms. Hulle kom uit baie bronne en word nie nagegaan nie.