single-quantum-well laser oor Frans
single-quantum-well laser
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laser à puits quantique unique
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In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length.
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Abstract: We report on strained layer InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated nonlinear wave guides for surface-emitting sum-frequency generation.
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Single quantum well ii-vi laser diode without cladding
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We observe a linear and extremely low increase in threshold current with unpumped length, both for single and double quantum well lasers.
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A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers (14, 16) of p-type and n-type ZnSe on an n-type GaAs substrate.
Là, c' est ton argentpatents-wipo patents-wipo
We have performed a detailed series of photoconductivity (PC) and photoluminescence (PL) measurements on a reverse-biased GaAs/AlGaAs single quantum well graded index separate confinement heterostructure laser.
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We investigate the wavelength and threshold current variation with passive wave-guide length in inhomogeneously pumped single and double quantum well InGaAs/AlGaAs strained layer ridge wave-guide lasers.
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Realization of single-mode quantum-well laser diodes for telecoms and characterizations 3 2
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The short cavity laser with a quantum well gain region, large free spectral range cavity, fast tuning response and single transverse, and longitudinal mode operation is disclosed.
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A laser, useful as part of a multiple wavelength optical fiber transmitter, includes a single mode, multiple quantum well semiconductor amplifying mirror as a gain element an includes a second mirror to form an optical cavity, the length of which defines a sequence of optical modes.
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A II-VI compound semiconductor laser diode (10) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding lasers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18).
On nous a séparéspatents-wipo patents-wipo
The invention relates to a semi-conductor laser component comprising a semi-conductor body, suitable for generating electromagnetic radiation, which has a single confinement heterostructure made up of an active series of layers with a quantum well structure, said series being arranged between a first outer covering layer of a first conductivity type and a second outer layer also belonging to the first conductivity type.
cette affectation cesse d'être obligatoire lorsque cette réserve atteint # % du capital socialpatents-wipo patents-wipo
A laser apparatus includes a first surface-emitting laser device having an active region including at least one group of two or more quantum wells configured to generate photons and having an internal mirror configured to reflect the generated photons, and first and second opposing end cavity mirrors optically coupled to each other via the internal mirror of the first surface-emitting laser device and arranged to reflect the photons generated by the first surface-emitting laser device back to the first surface-emitting laser device to form a standing wave having a single antinode coincident with said at least one group of two or more quantum wells.
Et tu ne peut pas imaginer combienpatents-wipo patents-wipo
13 sinne gevind in 17 ms. Hulle kom uit baie bronne en word nie nagegaan nie.