The present invention relates to a LED manufacturing method, which practices selective crystal growth only in the apex area of a semiconductor layer made of GaN in the shape of a hexagonal pyramid, thereby forming an active layer having a wavelength range from blue to red colors to manufacture a white LED, and a LED manufactured by the same, the method comprising the steps of: forming a first semiconductor layer (1); forming a second semiconductor layer (5) on the first semiconductor layer (1) by selective crystal growth such that the second semiconductor layer (5) has a pointed vertex portion; forming a third semiconductor layer (8) on the vertex portion of the second semiconductor layer (5) by selective crystal growth such that the third semiconductor layer (8) has various crystal faces; and forming a semiconductor layer (9), which includes an active layer, on the third semiconductor layer (8).
디지털 신호 처리 장치 및 그 장치를 포함하는 신호 처리 시스템patents-wipo patents-wipo