indium tin oxide
인듐 주석 산화물
indium oor Koreaans
indium
en
a metallic chemical element (symbol In) with an atomic number of 49.
Vertalings in die woordeboek Engels - Koreaans
인듐
en
metallic chemical element
The present invention relates to a transparent conductive film comprising indium oxide and tantalum oxide.
본 발명은 산화인듐 및 산화탄탈륨을 포함하는 것을 특징으로 하는 투명도전막에 관한 것이다.
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The present invention relates to a production method for a semiconductor quantum dot sensitized type of solar cell, and, more specifically, the production method of the present invention comprises: a quantum dot forming step in which a semiconductor layer containing a group 4 element and InP is formed on a substrate and then the substrate on which the semiconductor layer has been formed is subjected to a heat treatment, thereby forming n-type semiconductor quantum dots constituting group-4-element quantum dots from which the In (indium) has been removed and which have been doped with P (phosphorus).
피트니스 개인 교습 서비스업patents-wipo patents-wipo
Method for recovering indium from solution or mixture which contains indium
외과용 뼈대용품patents-wipo patents-wipo
Provided are: an etching-solution composition whereby it is possible to simultaneously etch a double film of a copper film and an indium tin oxide film or a double film of a copper film and a metal film; and an etching method using same.
화기용 총포미 (銃砲尾)patents-wipo patents-wipo
The active layer contains indium gallium nitride (InGaN), and the barrier layer is formed by alternately stacking an aluminum gallium nitride (AlGaN) thin film and an indium gallium nitride (InGaN) thin film.
공업용 가스 발생로patents-wipo patents-wipo
Gallium Indium Thallium
휴일캠프숙박서비스업jw2019 jw2019
Working fluids are chosen according to the temperatures at which the heat pipe must operate, with examples ranging from liquid helium for extremely low temperature applications (2–4 K) to mercury (523–923 K), sodium (873–1473 K) and even indium (2000–3000 K) for extremely high temperatures.
전기식 조절장치WikiMatrix WikiMatrix
The present invention relates to an aggregate phase precursor for producing a light absorbing layer and a method for producing the same, the aggregate phase precursor for producing a light absorbing layer of a solar cell comprises: a first phase having copper (Cu)-containing chalcogenide; and a second phase having indium (In)- and/or gallium (Ga)-containing chalcogenide, wherein the aggregate phase precursor is separated, in an ink solvent for producing a light absorbing layer, into particle aggregates of which 30% or more, on the basis of the whole weight of the precursor, have the first phase and/or the second phase or into independent particles having the first phase or the second phase.
직물용 합성섬유사patents-wipo patents-wipo
The present invention relates to a transparent conductive film comprising indium oxide and tantalum oxide.
퍼즐용 그림 조각patents-wipo patents-wipo
The method comprises the steps of: (a) depositing, on a substrate, a precursor including at least one of copper, indium, and gallium; (b) depositing selenium on one surface of the inside of a reaction container; (c) arranging the substrate inside the reaction container such that the selenium-deposited surface of the reaction container is spaced apart at a predetermined distance from the precursor-deposited surface of the substrate such that each surface faces the other, and then sealing the reaction container; (d) feeding the sealed reaction container into a reaction chamber of rapid thermal annealing equipment; and (e) annealing the reaction container so as to selenize the precursor of the substrate, thereby forming the light-absorption layer on the surface of the substrate.
벽보부착용 접착제patents-wipo patents-wipo
The aim of the present invention is to provide an indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and provide an inorganic semiconductor thin film produced thereby.
자동조절기기patents-wipo patents-wipo
The present invention relates to a method for recovering indium with high selectivity and high efficiency from a solution, a dispersion liquid or a mixture which contains indium, for example from seawater, industrial water, waste water, cooling water or a solution extracted from wastes of electronic products, such as a display panel, which contains indium.
시멘트모르타르 슬레이트patents-wipo patents-wipo
Indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and inorganic semiconductor thin film produced thereby
폐기물보관업patents-wipo patents-wipo
The precious-metal alloy for personal ornaments of the present invention contains at least one type of precious metal selected from the group comprising gold, silver and platinum, and further comprises germanium, bismuth and indium therewith.
컴퓨터소프트웨어대여업patents-wipo patents-wipo
Copper indium selenide nanoparticles and preparation method thereof
전기모기채취기patents-wipo patents-wipo
The present invention provides a method for preparing a copper-indium-gallium-selenium (CIGS) thin film-coated substrate, comprising the following steps: preparing a precursor substrate in which a metal precursor comprising copper, indium and gallium is coated on a first substrate; preparing a selenium-coated substrate in which selenium is coated on a second substrate; facing one surface of the metal precursor of the precursor substrate to one surface of selenium of the selenium-coated substrate and closely adhering the same; and heating the closely adhered precursor substrate and selenium-coated substrate at a temperature at which selenium coated on the selenium-coated substrate can evaporate.
비금속제 병마개patents-wipo patents-wipo
In 1863 the spectroscope, which can separate the unique band of colors that each element gives off, was used to identify indium, which was the 63rd element discovered.
화학식 1로 표시되는 화합물이 개시된다.jw2019 jw2019
The present invention relates to an etchant composition for etching a triple film constituted by an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, wherein the etchant composition comprises: 0.1 wt % to 10 wt % of a ferrous compound; 0.1 wt % to 10 wt % of nitric acid; 0.01 wt % to 5 wt % of a fluorine compound; with the remainder being water, and further comprises 0.1 wt % to 5 wt % of a phosphate compound.
신선한 시금치patents-wipo patents-wipo
To this end, the present invention provides a semiconductor ink composition which comprises a complex, represented by formula 1, incorporating a nitrate of a metal A which is an oxidising material and incorporating a metal B which is a fuel material; wherein the metal A and the metal B is each respectively a metal selected from the group consisting of indium, gallium, zinc, titanium, aluminium, lithium and zirconium, and metal A and metal B are different from each other.
사진용 조색액 [調色液]patents-wipo patents-wipo
Scientists at Georgia Institute of Technology (USA) have designed a wind-power generator made of flexible plastic strips with nanowires on one side and an indium tin oxide coating on the other.
금속가공용 유압프레스ParaCrawl Corpus ParaCrawl Corpus
Indium Phosphide (InP) process and chipsets
조화화환 (造花花環)ParaCrawl Corpus ParaCrawl Corpus
Research and trial production has been the solar cell, in addition to silicon series, there are cadmium sulfide, gallium arsenide, copper indium selenium and many other types of solar cells, too numerous to mention, the following are a few of the more common solar cells.
비금속제 텐트 팩ParaCrawl Corpus ParaCrawl Corpus
Our unique spatter deposition method ensures excellent adhesion between the ITO (Indium-Tin Oxide) film and polyester substrate.
약제용 타르타르ParaCrawl Corpus ParaCrawl Corpus
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