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threshold voltage

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Nonvolatile memory device using a threshold voltage switching material and method for manufacturing same
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Threshold voltage sensing circuit of organic light-emitting diode display device
CoMP 시스템에서 CoMP 협력집합을 구성하는 하향링크 전송점과 상향링크 수신점이일치하지 않는 경우, 단말의 PUCCH 전송 자원을 낭비하거나 겹치지 않도록 지시함으로써 효율적 자원활용이 가능해진다.patents-wipo patents-wipo
Nonvolatile memory device using a threshold voltage switching material and method for manufacturing same
서버호스팅업patents-wipo patents-wipo
Accordingly, the nonvolatile memory device of the present invention does not use tunneling during programming and changes the resistance state of the threshold voltage switching material into a low resistance state in order to run a program.
목제/밀랍제/석고제/플라스틱제 소입상 (小立像)patents-wipo patents-wipo
Disclosed are an image sensor and a method for driving an image sensor which compensate for deterioration of characteristics of MOS according to a threshold voltage change which may be generated when photodiodes are integrated in the same substrate together with an MOS circuit implementing an amplifier.
콘크리트건축용 기계patents-wipo patents-wipo
The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter.
노광 (露光) 된 영화필름patents-wipo patents-wipo
The present invention relates to an apparatus for compensating variations of a threshold voltage due to deterioration of a driving transistor (D-TR10) that constitutes a pixel circuit of an organic light emitting display device, the apparatus including a plurality of pixel circuits (Px10) disposed on regions where a plurality of gate lines supplying scan signals (SCAN) cross a plurality of data lines supplying picture signals (Vdata).
카레페이스트patents-wipo patents-wipo
The positive photosensitive organic-inorganic hybrid insulator composition according to the present invention simplifies the process and reduces costs by forming a double structure of existing SiNx Passivation/acrylic photo-sensitive organic insulator into a mono-layer, improves sensitivity, resolution, process margin, transparency, and anti-thermochromism, reduces electric power consumption by obtaining an insulator having a low dielectric constant, and removes an afterimage, crosstalk, and a shift phenomenon of threshold voltage.
본 발명은 검색시스템이 검색대상이 되는 객체의 식별정보를 수집하는 방법에 있어서, 사용자단말이 웹서버와 송수신하는 패킷을 미러링하는 미러링단계, 상기 미러링단계에서 미러링된 패킷으로부터 식별정보를 추출하는 추출단계, 및 식별정보 데이터베이스에 상기 추출단계에서 추출된 식별정보를 추가하는 추가단계를 포함한다.patents-wipo patents-wipo
The present invention comprises a plurality of pixel circuits (Px10) disposed in an area where a plurality of gate lines for supplying a row selection signal (SCAN) and a plurality of data lines for supplying a picture signal (Vdata) intersect, wherein each pixel circuit (Px10) comprises: an organic EL element (OLED10); a driving transistor (TR12) for controlling a current flowing through the organic EL element (OLED10) corresponding to the picture signal (Vdata); a switching transistor (TR11) whose conduction state is controlled according to the row selection signal (SCAN); a first capacitor (C11) for charging the threshold voltage of the driving transistor; and a second capacitor (C12) for charging the voltage corresponding to the picture signal (Vdata).
전화기받침 (직물제 또는 플라스틱제)patents-wipo patents-wipo
A method for regulating a reading voltage of a NAND flash memory device, comprises: reading LSB page data from an LSB page corresponding to a paired page of an MSB page; dividing the ranges of a first test reading voltage and a third test reading voltage into a plurality of sections; simultaneously changing the first test reading voltage and the third test reading voltage to read MSB page data from the MSB page; performing a bitwise operation on the LSB page data and the MSB page data; and counting the number of memory cells corresponding to a first threshold voltage state and a fourth threshold voltage state by using the result of the bitwise operation, wherein a first reading voltage and a third reading voltage can be set as a voltage corresponding to the section in which a change in the number of memory cells is the lowest.
스키 및 서프 보드용 가방patents-wipo patents-wipo
In other words, if VGS is at least as high as the threshold voltage, the MOSFET turns on.
자동차용 차양ParaCrawl Corpus ParaCrawl Corpus
A VSDTM material is a polymer nano-composite that behaves like an insulator (dielectric) during normal circuit operation and becomes conductive when the voltage across the VSDTM material increases beyond a predefined threshold voltage.
건축용 비금속제 덮개ParaCrawl Corpus ParaCrawl Corpus
We submitted a complete LabVIEW transistor test suite on wafer including on-state/off-state current measurements, sweep measurements, threshold voltage extraction procedures, and more, and benchmarked all the results with high-end third-party instrumentation.
연예인매니저업ParaCrawl Corpus ParaCrawl Corpus
From the graph of the ID -VGS temperature characteristic, at high temperatures there is a tendency for ID to increase if VGS is constant. Taking as an example the previous condition that ID = 1 A at Ta = 25°C, at Ta = 75°C, an ID of about 1.5 A can be passed, and so the conditions of use must be considered carefully. Returning to the gate threshold voltage, the temperature characteristic of VGS(th) is shown in a graph.
적층체 및 이를 포함하는 박막형 태양전지ParaCrawl Corpus ParaCrawl Corpus
The voltage switches back to an insulator again after the voltage drops below the threshold.
제지마감처리업ParaCrawl Corpus ParaCrawl Corpus
14 sinne gevind in 8 ms. Hulle kom uit baie bronne en word nie nagegaan nie.