field-effect transistor oor Masedonies
field-effect transistor
en
A type of transistor in which the flow of current between the source and the drain is modulated by the electric field around the gate electrode. FETs are used as amplifiers, oscillators, and switches and are characterized by an extremely high input impedance (resistance) that makes them particularly suitable for amplification of very small signals. Types of FETs include the junction FET and the metal-oxide semiconductor FET (MOSFET).
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Транзистор со ефект на поле
en
transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation
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A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET.
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The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.
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In 1934, Oskar Heil patented a field-effect transistor.
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Field-effect transistors are also distinguished by the method of insulation between channel and gate.
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Another synonym is IGFET for insulated-gate field-effect transistor.
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In 1959, Dawon Kahng and Martin M. (John) Atalla at Bell Labs invented the metal-oxide-semiconductor field-effect transistor (MOSFET) as an offshoot to the patented FET design.
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The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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The silicon MOSFET did not generate localized electron traps at the interface between the silicon and its native oxide layer, and thus was inherently free from the trapping and scattering of carriers that had impeded the performance of earlier field-effect transistors.
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