A manufacturing method of a low-temperature poly-silicon transistor comprises the following steps: step 1, forming a low-temperature poly-silicon layer (202) on a substrate (200), and patterning the low-temperature poly-silicon layer (202); step 2, forming a first insulating layer (204) on the low-temperature poly-silicon layer (202); step 3, forming in order a first metal layer, a second metal layer and a third metal layer (206, 208, 210) on the first insulating layer (204), and forming a grid (212) through a photomask process; and step 4, activating the low-temperature poly-silicon layer (202) at a temperature between 20°C and 370°C.
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