Metadata
Author: LASER-wikipedia2
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English[en]
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology available today that began its development in mid-1980s.
Chinese[zh]
磁阻式隨機存取記憶體(Magnetoresistive Random Access Memory,縮寫為MRAM),是一種非易失性記憶體技術,從1990年代開始發展。