Metadata
Author: patents-wipo
Data
English[en]
The present invention relates to a texture-etching solution composition for crystalline silicon wafers, and a texture-etching method and, more specifically, to: a texture-etching solution composition for crystalline silicon wafers which contains inorganic salt of chemical formula 1[AxHyB], and which is capable of preventing over-etching caused by an alkali compound by controlling differences in etching speed with respect to a direction of the silicon crystalline when forming a fine pyramid structure on the surface of the crystalline silicon wafer, such that quality deviations of the texture by position are minimized to increase light efficiency; and a texture-etching method.
French[fr]
La présente invention concerne une composition de solution de gravure de texture pour plaquettes de silicium cristallin, et un procédé de gravure de texture et, plus particulièrement : une composition de solution de gravure de texture pour plaquettes de silicium cristallin contenant un sel inorganique de formule chimique 1[AxHyB], et qui permet de prévenir une sur-gravure provoquée par un composé alcalin en régulant les différences de vitesse de gravure par rapport à une direction du silicium cristallin lors de la formation d'une structure pyramidale fine sur la surface de la plaquette de silicium cristallin, de sorte à réduire au minimum les déviations de la qualité de la texture selon la position afin d'augmenter l'efficacité lumineuse; et un procédé de gravure de texture.
Korean[ko]
본 발명은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것으로서, 보다 상세하게는 화학식 1[AxHyB]의 무기염을 포함함으로써, 결정성 실리콘 웨이퍼의 표면에 미세 피라미드 구조를 형성함에 있어서 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어하여 알칼리 화합물에 의한 과에칭을 방지함으로써 위치별 텍스쳐의 품질 편차를 최소화하여 광 효율을 증가시키는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것이다.