Metadata
Author: patents-wipo
Data
English[en]
A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate (10) is provided, and an array of silicon studs (16) is defined within the silicon substrate.
French[fr]
Un substrat de silicium (10) est formé et un alignement matriciel de pastilles de silicium (16) est défini dans le substrat de silicium.