Metadata
Author: patents-wipo
Data
English[en]
The disclosed device forms polycrystalline silicon by heat treating amorphous silicon which is formed on a substrate, and is characterized by comprising a pre-heating section (200) which pre-heats amorphous silicon, and a heat treating section (300) which performs crystallization heat treatment on the amorphous silicon that has been pre-heated in the pre-heating section (200).
French[fr]
Le dispositif de l'invention forme du silicium polycristallin par traitement thermique de silicium amorphe qui est formé sur un substrat et est caractérisé en ce qu'il comprend une section de préchauffage (200) qui préchauffe du silicium amorphe et une section de traitement thermique (300) qui effectue le traitement thermique de cristallisation sur le silicium amorphe qui a été préchauffé dans la section de préchauffage (200).
Korean[ko]
본 발명에 따른 장치는, 기판 상에 형성된 비정질 실리콘을 열처리하여 다결정 실리콘을 형성하는 장치로서, 비정질 실리콘을 예열(pre-heating)하는 예열부(200); 및 예열부(200)에서 예열된 비정질 실리콘을 결정화 열처리하는 열처리부(300)를 포함하는 것을 특징으로 한다.