Metadata
Author: patents-wipo
Data
English[en]
A method for manufacturing an injection-enhanced insulated-gate bipolar transistor, comprising the following steps: an n-type substrate (12) is provided; a p-type doped layer (14) is formed on the n-type substrate (12); a hard layer (20) is formed on the p-type doped layer (14); a groove (40) extending to the n-type substrate (12) is formed by etching on the p-type doped layer (14); an n-type doped layer (50) is formed on the sidewalls and bottom of the groove (40); the hard layer (20) is removed; p-type impurities of the p-type doped layer (14) and n-type impurities of the n-type doped layer (50) are driven in together, where the p-type impurities are diffused to form a p-type base region (60), and the n-type impurities are diffused to form an n-type buffer layer (70); a gated oxide dielectric layer (80) is formed on the surface of the groove (40); and, a polysilicon layer (90) is deposited in the groove having formed therein the gate oxide dielectric layer (80).
Chinese[zh]
一种注入增强型绝缘栅双极型晶体管的制造方法,其包括以下步骤:提供N型衬底(12);在N型衬底(12)上形成P型掺杂层(14);在P型掺杂层(14)上形成硬质层(20);在P型掺杂层(14)上刻蚀形成延伸至N型衬底(12)的沟槽(40);在沟槽(40)的侧壁和底部形成N型掺杂层(50);去除硬质层(20);对P型掺杂层(14)的P型杂质和N型掺杂层的N型杂质一起进行推阱,P型杂质扩散形成P型基区(60),N型杂质扩散形成N型缓冲层(70);在沟槽(40)表面形成栅氧介质层(80);在形成有栅氧介质层(80)的沟槽中沉积多晶硅层(90)。