Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.
"Sustratos" semiconductores de carburo de silicio (SiC), nitruro de galio (GaN), nitruro de aluminio (AlN) o nitruro de galio-aluminio (AlGaN), o lingotes, compuestos sintéticos (boules) u otras preformas de dichos materiales, con resistividades superiores a 10 000 ohm-cm a 20 °C.EurLex-2 EurLex-2