Especially, the solid-state image pickup device comprises a first protective film formed on the n-type impurity doped region and the BCCD region, poly silicon electrodes prepared on the first protective film formed on the BCCD region, a second protective film and a metal light shielding film sequentially coated on the poly silicon electrodes, a planarized BPSG film formed on the metal light shielding film and the first protective film of the surface of the n-type impurity doped region, and a color filter pattern formed on the planaized BPSG film.
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