본 발명은 반도체 발광소자의 제조 방법에 있어서, 반도체 발광소자는 활성층을 가지고, 활성층의 형성은: InN가 지배적인 박막과 GaN이 지배적인 박막을 교대로 반복 적층하는 단계; 그리고, 교대로 반복 적층된 InN가 지배적인 박막과 GaN이 지배적인 박막에 승온 열처리하여 InxGa1-xN(0
The present invention relates to a preparation method of a semiconductor light emitting device, and a semiconductor light emitting device prepared thereby, wherein the semiconductor light emitting device has an active layer, and a preparation method of the active layer comprising the following steps of: repeatedly laminating an InN-dominant thin film and a GaN-dominant thin film by turns; and increasing the temperature and heat treating the alternately and repeatedly laminated InN-dominant thin films and GaN-dominant thin films to form an InxGa1-xN (0patents-wipo patents-wipo