gallium oor Maltees
gallium
en
A chemical element (symbol Ga) with an atomic number of 31; a soft bluish metal.
Vertalings in die woordeboek Engels - Maltees
gallju
en
chemical element
CIGS technology is based on copper, indium, gallium and selenium and produced in thin-film technology.
It-teknoloġija ta’ CIGS hija bbażata fuq ir-ram, l-indju, il-gallju u s-selenju u hija prodotta b’teknoloġija b’rita rqiqa.
galljum
en
Chemical element with symbol Ga and atomic number 31, silvery white main group element.
Geskatte vertalings
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Prenteboek
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Voorbeelde moet herlaai word.
III/V compounds of gallium or indium.
Kellem lit-tabib tiegħek jekk xi effetti isiru problema jew jibqgħu għal żmien twilEurLex-2 EurLex-2
"III/V compounds" of gallium or indium.
Injetta kull soluzzjoni ta’ kalibrar (#.#) għal diversi drabi u kejjel l-aqwa għoli (l-erji) għal kull konċentrazzjoninot-set not-set
Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %;
Numru totali ta’ impriżi ta’ papri u wiżż li minnhom ittieħdu l-kampjunieurlex-diff-2018-06-20 eurlex-diff-2018-06-20
Gallium arsenide
Cervarix tista ’ ssibu f’ kunjetti f’ siringi mimlijin minn qabel bil-labar jew mingħajr labar f’ pakketti ta ’ # u ta ’Eurlex2019 Eurlex2019
Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.
l-applikazzjoni u l-interpretazzjoni tar-Regoli ta' Proċedura (emenda ta' l-Artikolu # tar-Regolament PE) (Artikolu # tar-Regoli ta' Proċedura) (votazzjoniEurLex-2 EurLex-2
Gallium nitride (GaN) high-frequency amplifier consisting of one or more discrete transistors, one or more discrete capacitor chips, whether or not with IPD (integrated passive devices) on a metal flange in a housing
Sommarju tal-Karatteristiċi tal-Prodott, sezzjoniEurlex2019 Eurlex2019
— Scrap of Hafnium, Indium, Niobium, Rhenium and Gallium
Id-Deċiżjoni tal-Kummissjoni #/#/KE tat-# ta’ Mejju # dwar żoni ta’ protezzjoni u sorveljanza fir-rigward tal-bluetongue u l-kondizzjonijiet li japplikaw għall-movimenti li joriġinaw jew jgħaddu minn dawn iż-żoni, tipprovdi għad-demarkazzjoni taż-żoni ġeografiċi globali fejn għandhom jiġu stabbiliti ż-żoni ta’ protezzjoni u sorveljanza (iż-żoni ristretti) mill-Istati MembriEurLex-2 EurLex-2
Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99.999%;
Minn mindu saret l-introduzzjoni ta’ miżuri bħal dawn u permezz ta’ l-informazzjoni li nkisbet minn programmi attivi ta’ sorveljanza mwettqa mill-Istati Membri, qatt ma ġiet stabbilita konnessjoni epidemjoloġika bejn it-TSE, apparti l-BSE, fl-annimali ovinu u kaprini u t-TSE fil-bnedminnot-set not-set
Dental materials including dental glass ionomer restorative materials, dental bleaching materials, dental amalgams, substances for taking dental casts, dental cements, dental phosphate cements, dental silicic cements, pastes for dental dressings, cements and porcelains for the manufacture of dental settings, dental restorative materials, composite dental restorative materials, materials for stopping teeth, dental wax, dental amalgam alloys, dental amalgam alloys in bulk form, tablet form and encapsulated form, mercury for the preparation of dental amalgams, dental gallium alloys, dental capsules for preparation of amalgams, mercury hygiene preparations, amalgam bonding materials, dental adhesives, dental pit and fissure sealants and dental impression materials
L-ewwel wasla f'Bodø m'għandhiex tkun iktar tard mis-#.# u l-aħħar tluq minn Bodø mhux qabel ittmClass tmClass
“Substrates” specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.
Il-pontijiet tax-xogħol, l-ekwipaġġament u l-ispazji, tankijiet jew kontenituri għandhom ikunu mnaddfa kull darba li jiġu wżati. ilma għax-xorb jew ilma baħar nadif għandu jkun użat għal dan l-iskopEurLex-2 EurLex-2
Beryllium, chromium, germanium, vanadium, gallium, hafnium, indium, niobium (columbium), rhenium and thallium, and articles of these metals, including waste and scrap, other than windows for X-ray tubes
Fuq nota ġenerali l-Kumitat jixtieq jenfasizza li ċ-ċertifikazzjoni diġitali taqa' fil-qasam ta' l-immaniġġar ta' prodott fejn japplikaw il-prinċipji ta' newtralità teknika u ta' kompetizzjoniEurLex-2 EurLex-2
Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %;
It-testi riferiti fil-paragrafu # għandhom ikunu bl-Ingliż u/jew bil-Franċiż u fEurLex-2 EurLex-2
Custom fabrication of optoelectronic components, microelectronic components, epitaxial wafers, silicon wafers, gallium nitride wafers, semiconductor wafers, and wafers with semiconductor layers for others
traffikar illeċitu ta’ armi, munizzjoni u splussivitmClass tmClass
Scrap of Hafnium, Indium, Niobium, Rhenium and Gallium
jekk id-dijametru tal-preċipitazzjoni fiż-żewġ diluwizzjonijiet huwa kbir wisq u bla saħħa, allura għandu jintagħżel is-serum l-aktar baxxEurLex-2 EurLex-2
Articles of hafnium (celtium), niobium (columbium), rhenium, gallium, indium, vanadium and germanium, n.e.s.
Għalhekk, żewġ inġenji tal-ajru li jinsabu fuq l-AOC ta' dan it-trasportatur bl-ajru bir-reġistrazzjoni RA-# u RA-# ma għandhomx joperaw fl-Unjoni EwropeaEurlex2019 Eurlex2019
‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.
Rikors ippreżentat fl-# ta' Settembru #- Ir-Repubblika Ellenika vs Il-Kummissjoni tal-Komunitajiet EwropejEuroParl2021 EuroParl2021
Gallium Nitride
Jistieden lill-Kummissjoni biex tkun aktar soda fl-applikazzjoni tal-Artikolu # tat-Trattat biex tiżgura li jkun hemm konformità mas-sentenzi tal-Qorti tal-ĠustizzjatmClass tmClass
— radiographic evidence of infection (e.g. abnormal findings on x-ray, CT scan, MRI, radiolabel scan [gallium, technetium, etc.]).
E-#/# (EL) minn Georgios Papastamkos (PPE) lill-Kummissjoni (# ta' AwwissuEurLex-2 EurLex-2
3C005Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.
Responsabbiltà fil-każ ta' ipproċessar illegali ta' data personaliEurLex-2 EurLex-2
Bismuth, gallium, selenium, tellurium and alloys thereof in ingot and broken ingot, cake, shot, powder, bars, rods, granules, needles, pellets, balls, sticks, wire and sheets
Il-Partijiet għandhom jasiguraw li r-rapporti tal-ispezzjoni jkunu mwassla minn mhux aktar minn # jiem kalendarji, dan il-perijodu jkun estiż għal # jum jekk spezzjoni ġdida tkun trit titwettaqtmClass tmClass
Niobium (columbium); rhenium; gallium; indium; vanadium; germanium
Jekk parti interessata ma tistax tipprovdi s-sottomissjonijiet u r-rapporti tagħha f’format elettroniku minħabba raġunijiet tekniċi, għandha tgħarraf lill-Kummissjoni minnufihoj4 oj4
Beryllium, chromium, germanium, vanadium, gallium, hafnium, indium, niobium (columbium), rhenium and thallium, and articles of these metals, including waste and scrap
L-obbligazzjonijiet fit-tul żdiedu b’mod konsistenti mill-# sal-# u mill-# sal-#, meta laħqu PLN #,# miljunoj4 oj4
Gallium Arsenide
ngħaġ, totaltmClass tmClass
202 sinne gevind in 7 ms. Hulle kom uit baie bronne en word nie nagegaan nie.