The present invention relates to a LED manufacturing method, which practices selective crystal growth only in the apex area of a semiconductor layer made of GaN in the shape of a hexagonal pyramid, thereby forming an active layer having a wavelength range from blue to red colors to manufacture a white LED, and a LED manufactured by the same, the method comprising the steps of: forming a first semiconductor layer (1); forming a second semiconductor layer (5) on the first semiconductor layer (1) by selective crystal growth such that the second semiconductor layer (5) has a pointed vertex portion; forming a third semiconductor layer (8) on the vertex portion of the second semiconductor layer (5) by selective crystal growth such that the third semiconductor layer (8) has various crystal faces; and forming a semiconductor layer (9), which includes an active layer, on the third semiconductor layer (8).
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μ μ‘κ°ν GaNμ νΌλΌλ―Έλμ λ°λ체측μ κΌλκΈ°μμμλ§ μ νμ κ²°μ μ±μ₯μ μ€μνμ¬, λ°±μ LED μ μ‘°λ₯Ό μν΄ μ²μμμ μ μκΉμ§μ νμ₯λ²μλ₯Ό κ°μ§λ νμ±μΈ΅μ νμ±ν μ μλλ‘ νλ LEDμ μ μ‘°λ°©λ² λ° μ΄μ μν΄ μ μ‘°λ LEDμ κ΄ν κ²μΌλ‘, μ 1 λ°λ체측(1)μ νμ±νλ λ¨κ³, μ 1 λ°λ체측(1) μμ μ νμ κ²°μ μ±μ₯μ μν΄ κΌμ§μ λΆλΆμ΄ λΎ°μ‘±ν ννμ μ 2 λ°λ체측(5)μ νμ±νλ λ¨κ³, μ 2 λ°λ체측(5)μ κΌμ§μ λΆλΆμ μ νμ κ²°μ μ±μ₯μ μν΄ λ€μν κ²°μ λ©΄μ κ°μ§λ μ 3 λ°λ체측(8)μ νμ±νλ λ¨κ³ λ° μ 3 λ°λ체측(8) μμ νμ±μΈ΅μ ν¬ν¨νλ λ°λ체측(9)μ νμ±νλ λ¨κ³λ‘ ꡬμ±λλ€.patents-wipo patents-wipo