본 발명은 반도체 양자점 감응형 태양전지의 제조방법에 관한 것으로, 상세하게, 본 발명의 제조방법은 기판 상부에 4족 원소 및 InP를 함유하는 반도체층을 형성한 후, 상기 반도체층이 형성된 기판을 열처리하여 In(Indium)을 제거하고 P(phosphorus)가 도핑된 4족 원소 양자점인 n형 반도체 양자점을 형성하는 양자점 형성 단계;를 포함하는 특징이 있다.
The present invention relates to a production method for a semiconductor quantum dot sensitized type of solar cell, and, more specifically, the production method of the present invention comprises: a quantum dot forming step in which a semiconductor layer containing a group 4 element and InP is formed on a substrate and then the substrate on which the semiconductor layer has been formed is subjected to a heat treatment, thereby forming n-type semiconductor quantum dots constituting group-4-element quantum dots from which the In (indium) has been removed and which have been doped with P (phosphorus).patents-wipo patents-wipo